EXMATEC 2012 OPTICAL STUDIES ON HOMOEPITAXIAL AlN

Optical Characterization of Lateral Epitaxial Overgrown GaN Layers

The optical properties of homoepitaxial GaN layers deposited by organometallic vapor phase epitaxy on stripe-patterned GaN films on 6H-SiC substrates have been investigated. Analysis of the spatiallyresolved Raman scattering spectra indicate an improvement in material quality of the overgrown region. Room-temperature color cathodoluminescence imaging and low-temperature photoluminescence measur...

Homoepitaxial growth of single crystal diamond membranes for quantum information processing.

Homoepitaxial growth of single crystal diamond membranes is demonstrated employing a microwave plasma chemical vapor deposition technique. The membranes possess excellent structural, optical, and spin properties, which make them suitable for fabrication of optical microcavities for applications in quantum information processing, photonics, spintronics, and sensing.

Electronic and Optical Properties of AlN Nanosheet Under Uni-axial Strain

   We have investigated the electronic and optical properties of AlN hexagonal nanosheets under different kinds of strains, using the band structure results obtained through the full potential linearized augmented plane wave method within the density functional theory. The results show that 10% uniaxial strain along the zig-zag direction induces an indirect to direct band-gap transition. Th...

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

Effect of Thickness on Structural and Morphological Properties of AlN Films Prepared Using Single Ion Beam Sputtering

Aluminum nitride (AlN) thin films have potential applications in microelectronic and optoelectronic devices. In this study, AlN thin films with different thicknesses were deposited on silicon substrate by single ion beam sputtering method. The X-ray diffraction (XRD) spectra revealed that the structure of films with thickness of - nm was amorphous, while the polycrystalline hexagonal AlN with a...